maximum ratings: (t c =25c) bd439 bd441 symbol BD440 bd442 units collector-base voltage v cbo 60 80 v collector-emitter voltage v ces 60 80 v collector-emitter voltage v ceo 60 80 v emitter-base voltage v ebo 5.0 v continuous collector current i c 4.0 a peak collector current (t10ms) i cm 7.0 a base current i b 1.0 a power dissipation p d 36 w operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 100 c/w thermal resistance jc 3.5 c/w electrical characteristics: (t c =25c) symbol test conditions min max units i cbo v cb =rated v cbo 100 a i ces v ce =rated v ceo 100 a i ebo v eb =5.0v 1.0 ma bv ceo i c =100ma (bd439, BD440) 60 v bv ceo i c =100ma (bd441, bd442) 80 v v ce(sat) i c =2.0a, i b =200ma 0.8 v v be(on) v ce =1.0v, i c =2.0a 1.5 v h fe v ce =5.0v, i c =10ma (bd439, BD440) 20 h fe v ce =5.0v, i c =10ma (bd441, bd442) 15 h fe v ce =1.0v, i c =500ma 40 h fe v ce =1.0v, i c =2.0a (bd439, BD440) 25 h fe v ce =1.0v, i c =2.0a (bd441, bd442) 15 f t v ce =1.0v, i c =250ma 3.0 mhz bd439 bd441 npn BD440 bd442 pnp complementary silicon power transistors to-126 case central semiconductor corp. tm r1 (2-february 2009) description: the central semiconductor bd439, BD440 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed for medium power, low speed switching applications. marking: full part number
central semiconductor corp. tm bd439 bd441 npn BD440 bd442 pnp complementary silicon power transistors r1 (2-february 2009) to-126 case - mechanical outline lead code: 1) emitter 2) collector 3) base marking: full part number
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